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uoc_wafer

Union Optronics 社 Wafer / Chips

Epi wafers for LD and LED

wafer and chips

ItemDescriptionsMaterialsSubstrate
Red Laser635nm ~ 690nm
Edge emitting laser
InGaAlP2 inch GaAs
substrate
Infrared
Laser
780nm ~ 980nm
Edge emitting laser
AlGaAs/Al-free
active layer
2 inch GaAs
substrate
Telecom.
Laser
1300nm ~ 1550nm
Edge emitting laser
InGaAlAs
/InGaAsP
2 inch InP
substrate
Customer
Design
OEM/ODMOEM/ODM2 inch GaAs/InP
substrate
High Speed LED650/660nm Resonant Cavity LED without Oxidation LayerDBR AlxGa1-xAs / AlxGa1-xAs
High Index/ Low Index
QW InGaP / AlGaInP
2" SC GaAs Sub.
High Speed LED650/660nm Resonant Cavity LED with Oxidation LayerDBR AlxGa1-xAs / AlxGa1-xAs
High Index/ Low Index
QW InGaP / AlGaInP
Oxidation Layer Al0.98Ga0.02As
2" SC GaAs Sub.



Laser diode chips

chips

Model No.λp
[nm]
Po
[mW]
Ith
[mA]
Iop
[mA]
Vop
[V]
SE
[W/A]
θ//θ⊥
U-CP-6305123636524322.20.557.533
U-CP-6505001650511172.20.8836
U-CP-6505021650511172.20.8836
U-CP-6505142655523312.20.63828
U-CP-66A0095p660100801902.40.851127
U-CP-98500449805012751.50.81330
U-CP-1305013p1310571.250.42234


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